Low energy etch process for nitrogen-containing dielectric layer

ABSTRACT

A stack that includes, from bottom to top, a nitrogen-containing dielectric layer, an interconnect level dielectric material layer, and a hard mask layer is formed on a substrate. The hard mask layer and the interconnect level dielectric material layer are patterned by an etch. Employing the patterned hard mask layer as an etch mask, the nitrogen-containing dielectric layer is patterned by a break-through anisotropic etch, which employs a fluorohydrocarbon-containing plasma to break through the nitrogen-containing dielectric layer. Fluorohydrocarbon gases used to generate the fluorohydrocarbon-containing plasma generate a carbon-rich polymer residue, which interact with the nitrogen-containing dielectric layer to form volatile compounds. Plasma energy can be decreased below 100 eV to reduce damage to physically exposed surfaces of the interconnect level dielectric material layer.

RELATED APPLICATION

This application is a divisional of U.S. Ser. No. 13/281,732, filed Oct.26, 2011, the entire contents of which are incorporated herein byreference.

BACKGROUND

The present disclosure relates to semiconductor processing methods, andparticularly to methods for anisotropically etching anitrogen-containing dielectric layer at low energy, and structures foreffecting the same.

“Trench-first” BEOL applications suffer issues due to residue formationwith exposed metal surfaces, metallic hard-mask retention, and damage tolow-k materials such as organosilicate glass throughout the patterntransfer process. Residual fluorine is usually linked to residueformation as well as low-k damage. However, residual fluorine is neededto provide sufficient etch rate for the material of a cap layer duringthe final stage of the pattern transfer process.

Increasing hard mask retention through process optimization ischallenging. Thus, there is a lower limit on the initial thickness ofthe hard mask that can be employed for adequate lithography processwindow.

Deposition of removable sidewall polymer deposition to impede damage tothe low-k materials has been extensively attempted. The removablesidewall polymer deposit fills the periphery of an opening formed duringan anisotropic etch process. The removable sidewall polymer deposit isremoved, by a wet etch or a dry etch, during subsequent etchingprocessing steps once the bottom of the trench is reached at the end ofthe anisotropic etch process. The requirement for removal of thesidewall polymer deposition severely limits the etching process windowfor the anisotropic etch, and effective increases the minimum dimensionof a via hole that can be formed by the anisotropic etch.

Thus, an anisotropic etch process is desired that does not fill aperiphery of a via hole with a polymer and provide protection to thelow-k materials at the same time.

BRIEF SUMMARY

A stack that includes, from bottom to top, a nitrogen-containingdielectric layer, an interconnect level dielectric material layer, and ahard mask layer is formed on a substrate. The hard mask layer and theinterconnect level dielectric material layer are patterned by an etch.Employing the patterned hard mask layer as an etch mask, thenitrogen-containing dielectric layer is patterned by a break-throughanisotropic etch, which employs a fluorohydrocarbon-containing plasma tobreak through the nitrogen-containing dielectric layer.Fluorohydrocarbon gases used to generate thefluorohydrocarbon-containing plasma generate a carbon-rich polymerresidue, which interact with the nitrogen-containing dielectric layer toform volatile compounds. Plasma energy can be decreased below 100 eV toreduce damage to physically exposed surfaces of the interconnect leveldielectric material layer.

According to an aspect of the present disclosure, a method of forming ametal interconnect structure is provided. The method includes: forming astack including, from bottom to top, a substrate, a nitrogen-containingdielectric layer, an interconnect level dielectric material layer, and ahard mask layer; forming an opening within the hard mask layer and thelow-k dielectric material layer; and anisotropically etching aphysically exposed portion of the nitrogen-containing dielectric layerunderneath the opening employing a fluorohydrocarbon-containing plasma.A volatile compound is formed on, and evaporates from, a surface of thenitrogen-containing dielectric layer. The volatile compound includesnitrogen derived from the nitrogen-containing dielectric layer and acarbon-rich polymer including carbon and fluorine and having a ratio ofcarbon to fluorine that is greater than 1.

According to another aspect of the present disclosure, a structure isprovided, which includes: a stack including, from bottom to top, asubstrate, a nitrogen-containing dielectric layer, an interconnect leveldielectric material layer, and a hard mask layer; an opening presentwithin the hard mask layer and the low-k dielectric material layer andextending downward into at least an upper portion of thenitrogen-containing dielectric layer; and a volatile compound located ona surface of the nitrogen-containing dielectric layer within in theopening. The volatile compound includes nitrogen and a carbon-richpolymer including carbon and fluorine and having a ratio of carbon tofluorine that is greater than 1.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a vertical cross-sectional view of a first exemplary structureafter formation of a stack including a substrate, a nitrogen-containingdielectric layer, an interconnect level dielectric layer, a dielectriccap layer, and a metallic hard mask layer according to a firstembodiment of the present disclosure.

FIG. 2 is a vertical cross-sectional view of the first exemplarystructure after application and lithographic patterning of aphotoresist, and transfer of the pattern in the photoresist into themetallic hard mask layer and the dielectric cap layer according to thefirst embodiment of the present disclosure.

FIG. 3 is a vertical cross-sectional view of the first exemplarystructure after removal of the photoresist, and transfer of the patternin the metallic hard mask layer into the interconnect level dielectriclayer according to the first embodiment of the present disclosure.

FIG. 4 is a vertical cross-sectional view of the first exemplarystructure during an anisotropic etch of the nitrogen-containingdielectric layer according to the first embodiment of the presentdisclosure.

FIG. 5 is a vertical cross-sectional view of the first exemplarystructure after the anisotropic etch according to the first embodimentof the present disclosure.

FIG. 6 is a vertical cross-sectional view of the first exemplarystructure after removal of a polymer and deposition of a conductivematerial layer in a cavity within the stack of the nitrogen-containingdielectric layer, the interconnect level dielectric layer, thedielectric cap layer, and the metallic hard mask layer according to thefirst embodiment of the present disclosure.

FIG. 7 is a vertical cross-sectional view of the first exemplarystructure after planarization of the deposited conductive material andremoval of the metallic hard mask layer according to the firstembodiment of the present disclosure.

FIG. 8 is a vertical cross-sectional view of the first exemplarystructure after forming an overlying interconnect level structureaccording to the first embodiment of the present disclosure.

FIG. 9 is a vertical cross-sectional view of a second exemplarystructure after formation of a via cavity according to a secondembodiment of the present disclosure.

FIG. 10 is a vertical cross-sectional view of the second exemplarystructure after applying and lithographically patterning a photoresistaccording to the second embodiment of the present disclosure.

FIG. 11 is a vertical cross-sectional view of the second exemplarystructure after transfer of the pattern in the photoresist into ametallic hard mask layer, a dielectric cap layer, and an upper portionof the interconnect level dielectric layer to form a line cavityaccording to the second embodiment of the present disclosure.

FIG. 12 is a vertical cross-sectional view of the second exemplarystructure during an anisotropic etch of the nitrogen-containingdielectric layer according to the second embodiment of the presentdisclosure.

FIG. 13 is a vertical cross-sectional view of the second exemplarystructure after the anisotropic etch of the nitrogen-containingdielectric layer according to the second embodiment of the presentdisclosure.

FIG. 14 is a vertical cross-sectional view of the second exemplarystructure after removal of a polymer and deposition of a conductivematerial in a line and via cavity within the stack of thenitrogen-containing dielectric layer, the interconnect level dielectriclayer, the dielectric cap layer, and the metallic hard mask layeraccording to the second embodiment of the present disclosure.

FIG. 15 is a vertical cross-sectional view of the second exemplarystructure after planarization of the deposited conductive material andremoval of the metallic hard mask layer according to the secondembodiment of the present disclosure.

DETAILED DESCRIPTION

As stated above, the present disclosure relates to methods foranisotropically etching a nitrogen-containing dielectric layer at lowenergy, and structures for effecting the same, which are now describedin detail with accompanying figures. Throughout the drawings, the samereference numerals or letters are used to designate like or equivalentelements. The drawings are not necessarily drawn to scale.

Referring to FIG. 1, a first exemplary structure according to a firstembodiment of the present disclosure includes a vertical material stack.The vertical material stack includes a substrate 10, an optionalunderling metal interconnect level structure 200, a nitrogen-containingdielectric layer 28, an interconnect level dielectric layer 30, adielectric cap layer 32, and a metallic hard mask layer 36.

The substrate 10 can include a semiconductor material, an insulatormaterial, a conductive material, or a combination thereof. Thesemiconductor material can be an elemental semiconductor material suchas silicon, germanium, carbon, or an alloy thereof, a III-V compoundsemiconductor material, a II-VI compound semiconductor material, or anycombination or stack thereof. The semiconductor material can be dopedwith electrical dopants such as B, Ga, In, P, As, and Sb. Multiplesemiconductor materials can be present in the substrate. The insulatormaterial can be doped or undoped silicon oxide, doped derivatives ofsilicon oxide, silicon nitride, silicon oxynitride, a dielectric metaloxide having a dielectric constant greater than 3.9, or a combination orstack thereof. Multiple insulator materials can be present in thesubstrate 10. The conductive material can include a metallic materialsuch as Cu, W, Ti, Ta, Al, WN, TiN, TaN, WC, TiC, TiC, or alloysthereof. The substrate 10 can include at least one semiconductor device(not shown) such as a field effect transistor, a junction transistor, adiode, a thyristor, a capacitor, an inductor, or any other semiconductordevice or optical device known in the art. Further, the substrate 10 caninclude a contact-level dielectric material layer and contact viastructures embedded therein.

If present, the optional underling metal interconnect level structure200 includes at least one conductive structure 24 and at least oneunderlying dielectric layer in each line level and in each via level.The optional underlying metal interconnect level structure 200 caninclude one or more line levels and/or one or more via levels. Each linelevel includes at least one conductive line structure providing alateral conductive path. Each via level includes at least one conductivevia structure providing a vertical conductive path. The at least oneconductive structure 24 includes the at least one conductive linestructure in the one or more line levels, and the at least oneconductive via structure in the one or more via levels.

The at least one underlying dielectric layer in a line level or in a vialevel can include doped or undoped silicon oxide (i.e., doped silicateglass or undoped silicate glass), silicon nitride, organosilicate glassthat includes Si, C, O, H, and optionally N, a dielectric metal oxide,or a combination thereof. For example, an underlying dielectric layercan include a stack, from bottom to top, of an underlying siliconnitride layer 18, an underlying interconnect level dielectric layer 20including a porous or non-porous organosilicate glass, and a dielectriccap layer 22 including silicon nitride or a nitrogen-dopedorganosilicate glass.

The nitrogen-containing dielectric layer 28 includes a dielectricmaterial that contains nitrogen. Exemplary dielectric materials thatcontain nitrogen that can be employed for the nitrogen-containingdielectric layer 28 include, but are not limited to, silicon nitride,silicon oxynitride, a dielectric material having a dielectric constantless than 3.9 and including nitrogen, a dielectric metal oxynitride, ora combination thereof. The thickness of the nitrogen-containingdielectric layer 28 can be from 1 nm to 30 nm, although lesser andgreater thicknesses can also be employed.

Silicon nitride that can be employed for the nitrogen-containingdielectric layer 28 can be a stoichiometric silicon nitride having theatomic ratio of 3:4 between silicon and nitrogen, or can be anon-stoichiometric silicon nitride. The silicon nitride in thenitrogen-containing dielectric layer 28 can be formed, for example, bychemical vapor deposition (CVD), and may, or may not, be treated withultraviolet radiation and/or with thermal treatment.

Silicon oxynitride that can be employed for the nitrogen-containingdielectric layer 28 has a composition of SiO_(x)N_(y), in which x is apositive number greater than 0 and less than 2, and y is a positivenumber greater than 0 and less than 4/3. The silicon oxynitride in thenitrogen-containing dielectric layer 28 can be formed, for example, bydeposition of a silicon oxynitride by chemical vapor deposition, bydeposition of silicon nitride followed by thermal oxidation or plasmaoxidation, or by deposition of silicon oxide followed by thermalnitridation or plasma nitridation.

Dielectric materials having a dielectric constant less than 3.9 arereferred to as low dielectric constant (low-k) dielectric materials.Nitrogen-containing low-k dielectric materials that can be employed forthe nitrogen-containing dielectric layer 28 include, but are not limitedto, a nitrogen-containing organosilicate glass. The nitrogen-containingorganosilicate glass includes Si, C, O, H, and N. An exemplarynitrogen-containing organosilicate glass is NBLoK™ that is commerciallyavailable from Applied Materials, Inc. The nitrogen-containing low-kdielectric material that is employed for the nitrogen-containingdielectric layer 28 can be deposited, for example, by chemical vapordeposition.

Dielectric metal oxynitrides that can be employed for thenitrogen-containing dielectric layer 28 include, but are not limited to,HfO_(x)N_(y), ZrO_(x)N_(y), La₂O_(x)N_(y), Al₂O_(x)N_(y), TiO_(x)N_(y),SrTiO_(x)N_(y), LaAlO_(x)N_(y), Y₂O_(x)N_(y), and an alloy thereof. Eachvalue of x is independently from 0.5 to 3 and each value of y isindependently from 0 to 2.

The interconnect level dielectric layer 30 includes a dielectricmaterial such as silicon oxide, silicon nitride, or a low-k dielectricmaterial such as organosilicate glass including at least Si, C, O, andH, and optionally N. The silicon oxide includes spin-on-oxide (SOG),undoped silicon oxide (undoped silicate glass), and doped silicon oxide(i.e., doped silicate glass) such as fluorosilicate glass (FSG),phosphosilicate glass (PSG), borosilicate glass (BSG), andborophosphosilicate glass (BPSG). The interconnect level dielectriclayer 30 can be deposited, for example, by plasma enhanced chemicalvapor deposition (PECVD) or spin coating. The thickness of theinterconnect level dielectric layer 30 can be from 30 nm to 600 nm,although lesser and greater thicknesses can also be employed.

In one embodiment, the interconnect level dielectric layer 30 includes aporous or non-porous organosilicate glass having a dielectric constantless than 2.8 and including Si, C, O, and H. The porous or non-porousorganosilicate glass can be deposited, for example, by plasma enhancedchemical vapor deposition (PECVD).

The dielectric cap layer 32 includes a non-porous dielectric materialsuch as silicon oxide, silicon nitride, silicon oxynitride, a dielectricmetal oxide, or a combination thereof. The dielectric cap layer 32 canbe formed, for example, by plasma enhanced chemical vapor deposition(PECVD). The thickness of the dielectric cap layer 32 can be from 5 nmto 300 nm, although lesser and greater thicknesses can also be employed.

The metallic hard mask layer 36 includes a metallic material such as WN,TiN, TaN, WC, TiC, TiC, or stacks or alloys thereof. The metallicdielectric cap layer 36 can be formed, for example, by physical vapordeposition (PVD) or chemical vapor deposition (CVD). The thickness ofthe metallic hard mask layer 36 can be from 5 nm to 300 nm, althoughlesser and greater thicknesses can also be employed.

Referring to FIG. 2, a photoresist 37 is formed either directly on thetop surface of the metallic hard mask layer 36. The photoresist 37 maybe formed, for example, by spin coating. The photoresist 37 can be adeep ultraviolet (DUV) photoresist, a mid-ultraviolet (MUV) photoresist,an extreme ultraviolet (EUV) photoresist, or an electron beam (e-beam)photoresist. The material of the photoresist 37 reacts to illuminationby light in a wavelength range or electron irradiation, and ischemically changed, for example, by cross-linking. The thickness of thephotoresist 37 can be from 30 nm to 600 nm, and typically from 60 nm to300 nm, although lesser and greater thicknesses can also be employed.

The photoresist 37 is lithographically exposed, and is subsequentlydeveloped. An opening having a first width w1 is formed within thephotoresist 37 after the lithographic exposure and development. A topsurface of the metallic hard mask layer 36 is physically exposed at thebottom of the opening in the photoresist 37. The pattern in thephotoresist 37 includes, for example, an opening 39 having a first widthw1, which is determined by the lithographic exposure conditions.

The pattern in the photoresist 37 is transferred into the metallic hardmask layer 36 and the dielectric cap layer 32 by at least one etch. Theat least one etch can include an anisotropic etch such as a reactive ionetch, or an isotropic etch such as a wet etch.

In one embodiment, the pattern in the photoresist 37 is transferred intothe metallic hard mask layer 36 by a first anisotropic etch that etchesthe metallic material of the metallic hard mask layer 36 employing thephotoresist 37 as an etch mask. The pattern in the metallic hard masklayer 36 is then transferred into the dielectric hard mask layer 32employing a second anisotropic etch that etches the dielectric materialof the dielectric hard mask layer 32.

The photoresist 37 is subsequently removed, for example, by ashing.

Referring to FIG. 3, an anisotropic etch is performed to transfer thepattern in the metallic hard mask layer 36 into the interconnect leveldielectric layer 30. An opening, which is herein referred to as a cavity31, having a second width w2 and extending from the top surface of themetallic hard mask layer 36 to the bottom of the interconnect leveldielectric layer 30, is formed by the anisotropic etch.

The anisotropic etch can employ a plasma of etchants. The species forthe etchants can be selected based on the composition of the dielectricmaterial in the interconnect level dielectric layer 30 and theselectivity of the anisotropic etch to the metallic material of themetallic hard mask layer 36, i.e., the ratio of the thickness of removeddielectric material(s) of the interconnect level dielectric layer 30 tothe thickness of the removed metallic material(s) of the metallic hardmask layer 36. In one embodiment, a selectivity greater than 10 can beachieved if the interconnect level dielectric layer 30 includes anorganosilicate glass, and the metallic hard mask layer 36 includes ametallic nitride such as TaN, TiN, and/or WN and/or a metallic carbidesuch as TaC, TiC, and/or WC.

Referring to FIG. 4, the first exemplary structure is placed into aprocess chamber configured for a plasma etch, i.e., a reactive ion etch.An anisotropic etch employing a fluorohydrocarbon-containing plasma isperformed on the first exemplary structure. The pattern in the metallichard mask layer 36 is transferred into an upper portion of thenitrogen-containing dielectric layer 28 during the initial phase of theanisotropic etch.

The composition of the gas supplied into the process chamber includesone or more fluorohydrocarbon gas (hereafter referred to as “thefluorohydrocarbon gas”) having a composition of C_(x)H_(y)F_(z), whereinx is an integer selected from 3, 4, 5, and 6, y and z are positiveintegers, and y is greater than z. For example, the fluorohydrocarbongas include one or more of C₃H₅F₃, C₃H₆F₂, C₃H₇F, C₃H₄F₂, C₃H₅F, C₃H₃F,C₄H₆F₄, C₄H₇F₃, C₄H₈F₂, C₄H₉F, C₄H₅F₃, C₄H₆F₂, C₄H₇F, C₄H₄F₂, C₄H₅F,C₅H₇F₅, C₅H₈F₄, C₅H₉F₃, C₅H₁₀F₂, C₅H₁₁F, C₅H₆F₄, C₅H₇F₃, C₅H₈F₂, C₅H₉F,C₅H₅F₃, C₅H₆F₂, C₅H₇F, C₆H₈F₆, C₆H₉F₅, C₆H₁₀F₄, C₆H₁₁F₃, C₆H₁₂F₂,C₆H₁₃F, C₆H₇F₅, C₆H₈F₄, C₆H₉F₃, C₆H₁₀F₂, C₆H₁₁F, C₆H₆F₄, C₆H₇F₃, C₆H₈F₂,and C₆H₉F. Correspondingly, the fluorohydrocarbon-containing plasmaincludes ions of C_(x)H_(y)F_(z). Optionally, the composition of the gassupplied into the process chamber can include O₂, N₂, Ar, CO, and/orCO₂. In other words, the fluorohydrocarbon-containing plasma optionallyincludes a plasma of oxygen.

Non-limiting specific examples of C_(x)H_(y)F_(z), wherein x is aninteger selected from 3, 4, 5, and 6, y and z are positive integers, andy is greater than z, include alkanes, alkenes, and alkynes.

In one embodiment, the fluorohydrocarbon gas can include one or morealkane fluorohydrocarbon gas having the formula of C_(x)H_(y)F_(z),wherein x is an integer selected from 3, 4, and 5, y and z are positiveintegers, and y is greater than z. The one or more alkanefluorohydrocarbon gas can include, but are not limited to: saturatedliner fluorohydrocarbons shown by C₃H₇F such as 1-fluoropropane,2-fluoropropane; saturated liner fluorohydrocarbons shown by C₃H₆F₂ suchas 1,1-difluoropropane, 2,2-difluoropropane, 1,2-difluoropropane,1,3-difluoropropane; saturated liner fluorohydrocarbons shown by C₃H₅F₃such as 1,1,1-trifluoropropane, 1,1,2-trifluoropropane,1,1,3-trifluoropropane, 1,2,2-trifluoropropane; saturated cyclicfluorohydrocarbon shown by C₃H₅F such as fluorocyclopropane; saturatedcyclic fluorohydrocarbon shown by C₃H₄F₂ such as1,2-difluorocycloproapne; saturated liner fluorohydrocarbons shown byC₄H₉F such as 1-fluorobutane, 2-fluorobutane; saturated linerfluorohydrocarbons shown by C₄H₈F₂ such as 1-fluoro-2-methylpropane,1,1-difluorobutane, 2,2-difluorobutane, 1,2-difluorobutane,1,3-difluorobutane, 1,4-difluorobutane, 2,3-difluorobutane,1,1-difluoro-2-methylpropane, 1,2-difluoro-2-methylpropane,1,3-difluoro-2-methylpropane; saturated liner fluorohydrocarbons shownby C₄H₇F₃ such as 1,1,1-trifluorobutane,1,1,1-trifluoro-2-methylpropane, 1,1,2-trifluorobutane,1,1,3-trifluorobutane, 1,1,4-trifluorobutane, 2,2,3-trifluorobutane,2,2,4-trifluorobutane, 1,1,2-trifluoro-2-methylpropane; saturated linerfluorohydrocarbons shown by C₄H₆F₄ such as 1,1,1,2-tetrafluorobutane,1,1,1,3-tetrafluorobutane, 1,1,1,4-tetrafluorobutane,1,1,2,2-tetrafluorobutane, 1,1,2,3-tetrafluorobutane,1,1,2,4-tetrafluorobutane, 1,1,3,3-tetrafluroobutane,1,1,3,4-tetrafluorobutane, 1,1,4,4-tetrafluorobutane,2,2,3,3-tetrafluorobutane, 2,2,3,4-tetrafluorobutane,1,2,3,4-tetrafluorobutane, 1,1,1,2-tetrafluoro-2-methylpropane,1,1,1,3-tetrafluoro-2-methylpropane,1,1,2,3-tetrafluoro-2-methylpropane,1,1,3,3-tetrafluoro-2-methylpropane; saturated cyclic fluorohydrocarbonshown by C₄H₇F such as fluorocyclobutane; saturated cyclicfluorohydrocarbons shown by C4H6F2 such as 1,1-difluorocyclobutane,1,2-difluorocyclobutane, 1,3-difluorocyclobutane; saturated cyclicfluorohydrocarbon shown by C₄H₅F₃ such as 1,1,2-trifluorocyclobutane,1,1,3-triflurocyclobutane; saturated liner fluorohydrocarbons shown byC₅H₁₁F such as 1-fluoropentane, 2-fluoropentane, 3-fluoropentane,1-fluoro-2-methylbutane, 1-fluoro-3-methylbutane,2-fluoro-3-methylbutane, 1-fluoro-2,2-dimethylpropane; saturated linerfluorohydrocarbons shown by C₅H₁₀F₂ such as 1,1-difluoropenatne,2,2-difluoropentane, 3,3-difluoropentane, 1,2-difluoropentane,1,3-difluoropentane, 1,4-difluoropentane, 1,5-difluoropentane,1,1-difluoro-2-methylbutane, 1,1-difluoro-3-methylbutane,1,2-difluoro-2-methylbutane, 1,2-difluoro-3-methylbutane,1,3-difluoro-2-methylbutane, 1,3-difluoro-3-methylbutane,1,4-difluoro-2-methylbutane, 2,2-difluoro-3-methylbutane,2,3-difluoro-2-methylbutane, 1,1-difluoro-2,2-dimethylpropane,1,3-difluoro-2,2-dimethylproapne, 1-fluoro-2-fluoromethylbutane;saturated liner fluorohydrocarbons shown by C₅H₉F₃ such as1,1,1-trifluoropentane, 1,1,2-trifluoropentane, 1,1,3-trifluoropentane,1,1,4-trifluoropentane, 1,1,1-trifluoro-2-methylbutane,1,1,2-trifluoro2,3-dimethylpropane; saturated cyclic fluorohydrocarbonsshown by C₅H₉F such as fluorocyclopentane, 1-fluoro-2-methylcyclobutane,1-fluoro-3-methylcyclobutane, (fluoromethyl)-cyclobutane; saturatedcyclic fluorohydrocarbons shown by C₅H₈F₂ such as1,2-difluorocyclopentane, 1,3-difluorocyclopentane,1,1-difluoro-2-methylcyclobutane, 1,1-difluoro-3-methylcyclobutane;saturated cyclic fluorohydrocarbons shown by C₅H₇F₃ such as1,1,2-trifluorocyclopentane, 1,2,3,trifluorocyclopentane.

Additionally or alternatively, the fluorohydrocarbon gas can include oneor more alkene fluorohydrocarbon gas having the formula ofC_(x)H_(y)F_(z), wherein x is an integer selected from 3, 4, and 5, yand z are positive integers, and y is greater than z. The one or morealkene fluorohydrocarbon gas can include, but are not limited to:unsaturated liner fluorohydrocarbons shown by C₃H₅F such as3-fluoropropene, 1-fluoropropene, 2-fluoropropene; unsaturated linerfluorohydrocarbons shown by C₃H₄F₂ such as 1,1-difluoropropene,3,3-difluoropropene; unsaturated cyclic fluorohydrocarbons shown byC3H₃F such as 3-fluorocyclopropene, 1-fluorocyclopropene; unsaturatedliner fluorohydrocarbons shown by C₄H₇F such as 1-fluorobutene,2-fluorobutene, 3-fluorobutene, 4-fluorobutene, 1-fluoro-2-butene,2-fluoro-2-butene, 1-fluoro-2-methylpropene, 3-fluoro-2-methylpropene,2-(fluoromethyl)-propene; unsaturated liner fluorohydrocarbons shown byC₄H₆F₂ such as 1,1-difluoro-2-methylpropene,3,3-difluoro-2-methylpropene, 2-(fluoromethyl)-fluoropropene,3,3-difluorobutene, 4,4-difluorobutene, 1,2-difluorobutene,1,1-difluoro-2-butene , 1,4-difluoro-2-butene; unsaturated linerfluorohydrocarbons shown by C₄H₅F₃ such as 4,4,4-trifluorobutene,3,3,4-trifluorobutene, 1,1,1-trifluoro-2-butene,1,1,4-trifluoro-2-butene; unsaturated cyclic fluorohydrocarbons shown byC₄H₅F such as 1-fluorocyclobutene, 3-fluorocyclobutene; unsaturatedcyclic fluorohydrocarbons shown by C₄H₄F₂ such as3,3-difluorocyclobutene, 3,4-difluorocyclobutene; unsaturated linerfluorohydrocarbons shown by C₅H₉F such as 1-fluoropentene,2-fluoropenten, 3-fluoropenten, 4-fluoropentene, 5-fluoropenten,1-fluoro-2-pentene, 2-fluoro-2-pentene, 3-fluoro-2-pentene,4-fluoro-2-pentene, 5-fluoro-2-pentene, 1-fluoro-2-methylbutene,1-fluoro-3-methylbutene, 3-fluoro-2-methylbutene,3-fluoro-3-methylbutene, 4-fluoro-2-methylbutene,4-fluoro-3-methylbutene, 1-fluoro-2-methyl-2-butene,1-fluoro-3-methyl-2-butene, 2-fluoro-3-methyl-2-butene,2-(fluoromethyl)-butene; unsaturated liner fluorohydrocarbons shown byC₅H₈F₂ such as 3,3-difluoropentene, 4,4-difluoropentene,5,5-difluoropentene, 1,2-difluoropentene, 3,4-difluoropentene,3,5-difluoropentene, 4,5-difluoropentene; unsaturated cyclicfluorohydrocarbons shown by C₅H₇F such as 1-fluorocyclopentene,3-fluorocylopentene, 4-fluorocyclopentene; unsaturated cyclicfluorohydrocarbons shown by C₅H₆F₂ such as 3,3-difluorocyclopentene,4,4-difluorocyclopentene, 1,3-difluorocyclopentene,1,4-difluorocyclopentene, 3,5-difluorocyclopentene.

Additionally or alternatively, the fluorohydrocarbon gas can include oneor more alkyne fluorohydrocarbon gas having the formula ofC_(x)H_(y)F_(z), wherein x is an integer selected from 3, 4, and 5, yand z are positive integers, and y is greater than z. The one or morealkyne fluorohydrocarbon gas can include, but are not limited to:unsaturated liner fluorohydrocarbon shown by C₃H₃F such as3-fluoropropyne; unsaturated liner fluorohydrocarbon shown by C₃H₂F₂such as 3,3-difluoropropyne; unsaturated liner fluorohydrocarbons shownby C₄H₅F such as 3-fluorobutyne, 4-fluorobutyne, 1-fluoro-2-butyne;unsaturated liner fluorohydrocarbons shown by C₄H₄F₂ such as3,3-difluorobutyne, 4,4-difluorobutyne, 3,4-difluorobutyne,1,4-difluoro-2-butyne; unsaturated liner fluorohydrocarbons shown byC₅H₇F such as 3-fluoropentyne, 4-fluoropentyne, 5-fluoropentyne,1-fluoro-2-pnetyne, 4-fluoro-2-pentyne, 5-fluoro-2-pentyne,3-(fluoromethyl)-butyne; unsaturated liner fluorohydrocarbons shown byC₅H₆F₂ such as 3,3-difluoropentyne, 4,4-difluoropentyne,5,5-difluoropentyne, 3,4-difluoropentyne, 4,5-difluoropentyne,1,1-difluoro-2-pentyne, 4,4-difluor-2-pentyne, 5,5-difluoro-2-pentyne,4,5-difluoro-2-pentyne, 3-(difluoromethyl)-butyne,3-(fluoromethyl)-4-fluorobutyne.

The fluorohydrocarbon-containing plasma generates afluorohydrocarbon-containing polymer during the anisotropic etch. Thefluorohydrocarbon-containing polymer is deposited on the recessedsurface of the nitrogen-containing dielectric layer 28 to form a firstfluorohydrocarbon-containing polymer portion 29, and on the top surfaceof the metallic hard mask layer 36 to form a secondfluorohydrocarbon-containing polymer portion 23. Thefluorohydrocarbon-containing polymer in the firstfluorohydrocarbon-containing polymer portion 29 and the secondfluorohydrocarbon-containing polymer portion 23 includes carbon,hydrogen, and fluorine. The atomic concentration of carbon in thefluorohydrocarbon-containing polymer is greater than the atomicconcentration of fluorine in the fluorohydrocarbon-containing polymer.

The atomic concentration of carbon is greater than the atomicconcentration of fluorine in the fluorohydrocarbon-containing polymer inthe first fluorohydrocarbon-containing polymer portion 29 and the secondfluorohydrocarbon-containing polymer portion 23. In other words, theatomic ratio of carbon to fluorine is greater than 1 in thefluorohydrocarbon-containing polymer. Thus, thefluorohydrocarbon-containing polymer in the firstfluorohydrocarbon-containing polymer portion 29 and the secondfluorohydrocarbon-containing polymer portion 23 is a “carbon-rich”polymer. As used herein, a fluorohydrocarbon-containing polymer is“carbon-rich” if the atomic concentration of carbon is greater than theatomic concentration of fluorine.

The fluorohydrocarbon-containing polymer includes hydrogen at an atomicconcentration that is at least one half of the atomic concentration ofcarbon in the carbon-rich fluorohydrocarbon-containing polymer 33. Inone embodiment, the atomic ratio of hydrogen to carbon in thefluorohydrocarbon-containing polymer is between 0.5 and 3.0.

The fluorohydrocarbon-containing polymer is a carbon-based polymer,i.e., more than 10% of all bonds therein are bonded to at least onecarbon atom. In one embodiment, the fluorohydrocarbon-containing polymerin the first fluorohydrocarbon-containing polymer portion 29 and thesecond fluorohydrocarbon-containing polymer portion 23 includes carbonat an atomic concentration between 30% and 40%, hydrogen at an atomicconcentration between 40 and 50%, fluorine at an atomic concentrationbetween 5.0% and 10.0%, and oxygen at an atomic concentration less than5%.

The physically exposed portion of the nitrogen-containing dielectriclayer 28 is anisotropically etched underneath the cavity 31 by thefluorohydrocarbon-containing plasma. An opening, i.e., the cavity 31, ispresent within the metallic hard mask layer 36, the dielectric cap layer32, and the interconnect level dielectric layer 30 and extends downwardinto at least the upper portion of the nitrogen-containing dielectriclayer 28. The fluorohydrocarbon-containing polymer in the firstfluorohydrocarbon-containing polymer portion 29 reacts with nitrogenatoms in the nitrogen-containing dielectric layer 22 to form anitrogen-containing volatile compound. As used herein, a compound is“volatile” if it evaporates in vacuum at 297.3 K. Thenitrogen-containing volatile compound is formed on, volatilizes at, andevaporates from, the recessed surface of the nitrogen-containingdielectric layer 28. The nitrogen-containing volatile compound includesnitrogen derived from the nitrogen-containing dielectric layer and thecarbon-rich fluorohydrocarbon-containing polymer of the firstfluorohydrocarbon-containing polymer portion 29, which includes carbonand fluorine and has an atomic ratio of carbon to fluorine that isgreater than 1.

The nitrogen-containing volatile compound has a general formula ofC_(i)H_(j)F_(k)N_(l), wherein i, j, k, and l are integers. The value fori can be from 1 to 6, the value for j can be from 0 to 8, the value fork can be from 0 to 6, and the value for 1 can be from 0 to 4, althoughlesser and greater values can be employed for each of i, j, k, and l.The nitrogen-containing volatile compound volatilizes, and is removedfrom, the recessed surface of the nitrogen-containing dielectric layer22. In contrast, the fluorohydrocarbon-containing polymer in the secondfluorohydrocarbon-containing polymer portion 23 does not react with theunderlying metallic material of the metallic hard mask layer 36. Thesecond fluorohydrocarbon-containing polymer portion 23 includes the samecarbon-rich fluorohydrocarbon-containing polymer as the firstfluorohydrocarbon-containing polymer portion 29, and does not includenitrogen.

Thus, the average thickness of the first fluorohydrocarbon-containingpolymer portion 29 saturates at a steady-state thickness, which isherein referred to as a first thickness. The first thickness istypically from 0.2 nm to 1.0 nm, although lesser and greater thicknessescan also be employed depending on the composition and energy of thefluorohydrocarbon-containing plasma. Because thefluorohydrocarbon-containing polymer in the secondfluorohydrocarbon-containing polymer portion 23 does not react with theunderlying metallic material of the metallic hard mask layer 36, theaverage thickness of the second fluorohydrocarbon-containing polymerportion 23 tends to continually increase with the progression of theanisotropic etch, or saturates at a thickness that is greater than thefirst thickness. The saturation value for the second thickness can befrom 1 nm to 3 nm, although the saturation value can be lesser orgreater depending on the composition and energy of thefluorohydrocarbon-containing plasma. The second thickness is greaterthan the first thickness throughout the duration of the anisotropicetch.

The quantity of the fluorohydrocarbon-containing polymer generated inthis anisotropic etch tends to be profuse relative to conventionalplasma processes employing ions of CF₄ or CHF₃ having comparable kineticenergy for the plasma because the source gases have a high atomicpercentage of carbon and a high atomic percentage of hydrogen relativeto CF₄ or CHF₃ employed in conventional anisotropic etch processes. Forexample, the quantity of the fluorohydrocarbon-containing polymergenerated in this anisotropic etch is at least twice as much as, and insome embodiments ten or more times as much as, the amount of polymergenerated in conventional plasma processes employing ions of CF₄ or CHF₃having comparable kinetic energy. Thus, the energy of thefluorohydrocarbon-containing plasma of the present disclosure can besignificantly lowered relative to the energy employed for conventionalanisotropic etch processes. Specifically, while conventional plasmarequires minimum ion energy of 200 eV, the ions in thefluorohydrocarbon-containing plasma of the present disclosure can havean energy less than 200 eV. The ions in the fluorohydrocarbon-containingplasma of the present disclosure can have an average kinetic energybetween 10 eV and 1 keV. In one embodiment, the ions in thefluorohydrocarbon-containing plasma of the present disclosure can havean average kinetic energy in a range from 10 eV to 100 eV.

Due to the high carbon content and the high hydrogen content in thesource gas(es) of the fluorohydrocarbon-containing plasma relative tothe carbon content and the hydrogen content of conventional plasmas ofCF₄ or CHF₃, the fluorohydrocarbon-containing polymer in the firstfluorohydrocarbon-containing polymer portion 29 and the secondfluorohydrocarbon-containing polymer portion 23 has different propertiesthan polymers deposited in a plasma etch process employing CF₄ or CHF₃.For example, the fluorohydrocarbon-containing polymer in the firstfluorohydrocarbon-containing polymer portion 29 and the secondfluorohydrocarbon-containing polymer portion 23 has a refractive indexin a range from 1.8 to 2.2, while polymers deposited in a plasma etchprocess employing CF₄ or CHF₃ have a refractive index in a range from1.4-1.7. Further, the fluorohydrocarbon-containing polymer in the firstfluorohydrocarbon-containing polymer portion 29 and the secondfluorohydrocarbon-containing polymer portion 23 has a density in a rangefrom 1.5 g/cm³ to 1.8 g/cm³, while polymers deposited in a plasma etchprocess employing CF₄ or CHF₃ have a density greater than 1.7 g/cm³ to2.0 g/cm³. In one embodiment, the fluorohydrocarbon-containing polymerin the first fluorohydrocarbon-containing polymer portion 29 and thesecond fluorohydrocarbon-containing polymer portion 23 has a density ina range from 1.5 g/cm³ to 1.7 g/cm³.

In one embodiment, the interconnect level dielectric layer 30 includes alow-k dielectric material such as organosilicate glass, and thefluorohydrocarbon-containing plasma causes a structural damage to thephysically exposed surfaces of the low-k dielectric material.Specifically, the chemical bonds among the molecules of the low-kdielectric material are partially damaged, and fluorine can beincorporated into the low-k dielectric material during the anisotropicetch to convert a vertical surface portion of the interconnect leveldielectric layer 30 laterally surrounding the cavity 31 into afluorine-containing damaged low-k material portion 33. The thickness tof the fluorine-containing damaged low-k material portion 33 can be from2 nm to 20 nm, although lesser and greater thicknesses can also beemployed. Due to the carbon-rich nature of the polymer, the thickness ofthe fluorine-containing damaged low-k material portion 33 is less sthana thickness of a damaged low-k material portion formed in an anisotropicetch process employing a comparable CF₄ and/or CHF₃ plasmas.

Referring to FIG. 5, the transfer of the pattern in metallic hard masklayer 36 proceeds to the bottom surface of the nitrogen-containingdielectric layer 28 as the anisotropic etch continues until a topsurface of the substrate 10 or a top surface of the optional underlyingmetal interconnect level structure 200 is exposed. The substrate 10 orthe optional underlying metal interconnect level structure 200 can beemployed as an etch stop layer for the anisotropic etch. For example,the change in the composition of the ions in thefluorohydrocarbon-containing plasma that accompanies physical exposureof the top surface of the substrate 10 or the optional underlying metalinterconnect level structure 200 can be detected by optical means, andemployed as a signal that triggers an immediate termination, or adelayed termination (after an overetch), of the anisotropic etch.

The cavity 31 may be a line trench that defines the spatial extent of aconductive line structure to be subsequently formed, or may be a viahole that defines the spatial extent of a conductive via structure to besubsequently formed. A plurality of cavities 31 can be formed in thestack of the nitrogen-containing dielectric layer 28, the interconnectlevel dielectric layer 30, the dielectric cap layer 32, and the metallichard mask layer 36.

Referring to FIG. 6, any remaining polymer at the end of the anisotropicetch is removed, for example, by a wet clean. A conductive materiallayer 34L is deposited in the cavity 31 within the stack of thenitrogen-containing dielectric layer 28, the interconnect leveldielectric layer 30, the dielectric cap layer 32, and the metallic hardmask layer 36, for example, by electroplating, electroless plating,physical vapor deposition (PVD), chemical vapor deposition (CVD), or acombination thereof. The conductive material layer 34L includes at leastone metallic material such as Cu, Al, W, TiN, TaN, WN, TiC, TaC, WC, andcombinations thereof. The deposited conductive material of theconductive material layer 34L completely fills the cavity 31 within thenitrogen-containing dielectric layer 28, the interconnect leveldielectric layer 30, the dielectric cap layer 32, and the metallic hardmask layer 36.

Referring to FIG. 7, the excess conductive material above the topsurface of the dielectric cap layer 32 and the metallic hard mask layer36 are removed, for example, by chemical mechanical planarization (CMP).The dielectric cap layer 32 can be employed as a stopping layer for theplanarization process. The remaining portion of the conductive materiallayer 34L after planarization constitutes a metal interconnect structure34, which can be a conductive line or a conductive via depending thelateral extent of the conductive material layer 34L and the topologicalfeatures of the conductive material layer 34L with respect to theunderlying at least one conductive structure 24 in the optionalunderling metal interconnect level structure 200, if present, and withrespect to overlying conductive structures that may be optionallyformed.

Referring to FIG. 8, an overlying interconnect level structure 500 canbe optionally formed. The overlying interconnect level structure 500 caninclude, for example, an overlying nitrogen-containing dielectric layer38, an overlying interconnect level dielectric layer 50, an overlyingdielectric layer 52, and an overlying metal interconnect structure 54.The overlying interconnect level structure 500 can be formed, forexample, employing the same methods as in the processing steps of FIGS.2-7.

Referring to FIG. 9, a second exemplary structure according to a secondembodiment of the present disclosure can be derived from the firstexemplary structure of FIG. 1, and by modifying the processing steps ofFIG. 2 such that the cavity 31 does not extend to the top surface of thenitrogen-including dielectric layer 28 at the end of the patterntransfer from the photoresist 37 to the upper portion of theinterconnect level dielectric layer 30. The cavity 31 as formed withinthe second exemplary structure is herein referred to as a via cavity31′. Thus, there is a finite distance between the bottom surface of thevia cavity 31′ and the top surface of the nitrogen-containing dielectriclayer 28 after removal of the photoresist 37 at the processing stepcorresponding to the processing step of FIG. 3. The vertical distancebetween the topmost surface of the interconnect level dielectric layer30 and the bottom surface of the via cavity 31′ can be from 15% to 85%of the vertical distance between the topmost surface of the interconnectlevel dielectric layer 30 and the bottommost surface of the interconnectlevel dielectric layer 30. The width of the via cavity 31′ at the end ofthe etch is herein referred to as a via width wv. The pattern of the viacavity 31′ can be selected to define an area of a conductive viastructure to be subsequently formed.

Referring to FIG. 10, another photoresist 47 is applied over the secondexemplary structure, and is lithographically patterned to form anopening 49 in the photoresist 47. The opening 49 overlies the cavity 31,and the area of the opening 49 may include the entirety of the area ofthe cavity 31. The width of the opening 49 is herein referred to as aline width wl. The pattern of the opening 49 can be selected to definean area of a conductive line structure to be subsequently formed.

Referring to FIG. 11, an anisotropic etch is performed to transfer thepattern in the metallic hard mask layer 36 into an upper portion of theinterconnect level dielectric layer 30 to form a line cavity 41. At thesame time, the anisotropic etch also recesses the bottom surface of thevia cavity 31′. A dual damascene integrated cavity including the linecavity 41 and the via cavity 31′ is formed within the material stack ofthe interconnect level dielectric layer 30, the dielectric cap layer 32,and the metallic hard mask layer 36. A planar bottom surface of the linecavity 41 can be located at a level between the bottommost surface ofthe interconnect level dielectric layer 30 and the topmost surface ofthe interconnect level dielectric layer 30.

The anisotropic etch can employ a plasma of etchants as in the firstembodiment. The species for the etchants can be selected based on thecomposition of the dielectric material in the interconnect leveldielectric layer 30 and the selectivity of the anisotropic etch to themetallic material of the metallic hard mask layer 36. In one embodiment,a selectivity greater than 10 can be achieved if the interconnect leveldielectric layer 30 includes an organosilicate glass, and the metallichard mask layer 36 includes a metallic nitride such as TaN, TiN, and/orWN and/or a metallic carbide such as TaC, TiC, and/or WC.

Referring to FIG. 12, the second exemplary structure is placed into aprocess chamber configured for a plasma etch. An anisotropic etchemploying a fluorohydrocarbon-containing plasma is performed on thesecond exemplary structure. The pattern in the via cavity 31′ istransferred into an upper portion of the nitrogen-containing dielectriclayer 28 during the initial phase of the anisotropic etch.

The same fluorohydrocarbon-containing plasma can be employed as in thefirst embodiment. Thus, a first fluorohydrocarbon-containing polymerportion 29 is formed on a recessed surface of the nitrogen-containingdielectric layer 28, and a second fluorohydrocarbon-containing polymerportion 23 is formed on the top surface of the metallic hard mask layer36. The composition and physical properties of the firstfluorohydrocarbon-containing polymer portion 29 and secondfluorohydrocarbon-containing polymer portion 23 are the same as in thefirst embodiment. Thus, the same nitrogen-containing volatile compoundis formed in the second fluorohydrocarbon-containing polymer portion 23by the reaction of the nitrogen atoms from the nitrogen-containingdielectric layer 28 and the carbon-rich fluorohydrocarbon-containingpolymer present within the first fluorohydrocarbon-containing polymerportion 29.

In one embodiment, the interconnect level dielectric layer 30 includes alow-k dielectric material such as organosilicate glass, and thefluorohydrocarbon-containing plasma causes a structural damage to thephysically exposed surfaces of the low-k dielectric material. Thus,fluorine can be incorporated into the low-k dielectric material of theinterconnect level dielectric layer 30 during the anisotropic etch toconvert a vertical surface portion of the interconnect level dielectriclayer 30 around the line cavity 41 to form an upper verticalfluorine-containing damaged low-k material portion 43, a horizontalsurface portion of the interconnect level dielectric layer 30 at thebottom of the line cavity 41 to form a horizontal fluorine-containingdamaged low-k material portion 35, and a vertical surface portion of theinterconnect level dielectric layer 30 around the via cavity 31′ to forma lower vertical fluorine-containing damaged low-k material portion 33′,respectively. The thickness t of the various fluorine-containing damagedlow-k material portions (43, 35, 33′) can be from 2 nm to 20 nm,although lesser and greater thicknesses can also be employed. Because ofthe carbon rich nature of the CHF ion and the lower energy, thethickness of the horizontal fluorine-containing damaged low-k materialportion 35 is lesser than a thickness of damaged low-k material regionsformed in an anisotropic etch process employing a comparable CF₄ and/orCHF₃ plasmas.

Referring to FIG. 13, the transfer of the pattern in the via cavity 31′into the nitrogen-containing dielectric layer 28 proceeds to the bottomsurface of the nitrogen-containing dielectric layer 28 as theanisotropic etch continues until a top surface of the substrate 10 or atop surface of the optional underlying metal interconnect levelstructure 200 is exposed. The substrate 10 or the optional underlyingmetal interconnect level structure 200 can be employed as an etch stoplayer for the anisotropic etch. For example, the change in thecomposition of the ions in the fluorohydrocarbon-containing plasma thataccompanies physical exposure of the top surface of the substrate 10 orthe optional underlying metal interconnect level structure 200 can bedetected by optical means, and employed as a signal that triggers animmediate termination, or a delayed termination (after an overetch), ofthe anisotropic etch. A plurality of dual damascene integrated cavities(41, 31′) can be formed in the stack of the nitrogen-containingdielectric layer 28, the interconnect level dielectric layer 30, thedielectric cap layer 32, and the metallic hard mask layer 36.

Referring to FIG. 14, any remaining polymer at the end of theanisotropic etch is removed, for example, by a wet clean. A conductivematerial layer 34L is deposited in the cavity 31 within the stack of thenitrogen-containing dielectric layer 28, the interconnect leveldielectric layer 30, the dielectric cap layer 32, and the metallic hardmask layer 36, for example, by electroplating, electroless plating,physical vapor deposition (PVD), chemical vapor deposition (CVD), or acombination thereof. The conductive material layer 34L includes at leastone metallic material such as Cu, Al, W, TiN, TaN, WN, TiC, TaC, WC, andcombinations thereof. The deposited conductive material of theconductive material layer 34L completely fills the dual damasceneintegrated cavity (41, 31′) within the nitrogen-containing dielectriclayer 28, the interconnect level dielectric layer 30, the dielectric caplayer 32, and the metallic hard mask layer 36.

Referring to FIG. 15, the excess conductive material above the topsurface of the dielectric cap layer 32 and the metallic hard mask layer36 are removed, for example, by chemical mechanical planarization (CMP).The dielectric cap layer 32 can be employed as a stopping layer for theplanarization process. The remaining portion of the conductive materiallayer 34L after planarization constitutes a metal interconnect structure34, which is an integrated line and via structure.

While the disclosure has been described in terms of specificembodiments, it is evident in view of the foregoing description thatnumerous alternatives, modifications and variations will be apparent tothose skilled in the art. Accordingly, the disclosure is intended toencompass all such alternatives, modifications and variations which fallwithin the scope and spirit of the disclosure and the following claims.

1-16. (canceled)
 17. A structure comprising: a stack comprising, frombottom to top, a substrate, a nitrogen-containing dielectric layer, aninterconnect level dielectric material layer, and a hard mask layer; anopening present within said hard mask layer and said interconnect leveldielectric material layer and extending downward into at least an upperportion of said nitrogen-containing dielectric layer; and a carbon-richpolymer layer comprising a carbon-rich polymer including carbon andfluorine and having a ratio of carbon to fluorine that is greater than1, wherein a first portion of said carbon-rich polymer layer is locatedon a surface of said nitrogen-containing dielectric layer exposed bysaid opening and has a first thickness, a second portion of saidcarbon-rich polymer layer is located on a top surface of said hard masklayer and has a second thickness greater than said first thickness. 18.(canceled)
 19. The structure of claim 17, wherein said carbon-richpolymer has a refractive index in a range from 1.8 to 2.2.
 20. Thestructure of claim 17, wherein said carbon-rich polymer has a density ina range from 1.5 g/cm³ to 1.7 g/cm³.
 21. The structure of claim 17,wherein said carbon-rich polymer has a composition that includes carbonat an atomic concentration between 30% and 40%, hydrogen at an atomicconcentration between 40% and 50%, fluorine at an atomic concentrationbetween 5.0% and 10.0%, and oxygen at an atomic concentration less than5%.
 22. The structure of claim 17, wherein said carbon-rich polymerincludes hydrogen at an atomic concentration that is at least one halfof said atomic concentration of carbon in said carbon-rich polymer. 23.The structure of claim 17, wherein an atomic ratio of hydrogen to carbonin said carbon-rich polymer is between 0.5 and 3.0.
 24. The structure ofclaim 17, wherein said nitrogen-containing dielectric layer comprisessilicon nitride.
 25. The structure of claim 17, wherein saidnitrogen-containing dielectric layer comprises a dielectric materialhaving a dielectric constant less than 3.9 and including nitrogen. 26.The structure of claim 17, further comprising a volatile compoundlocated between said first portion of said carbon-rich polymer layer andsaid surface of said nitrogen-containing dielectric layer within saidopening, wherein said volatile compound is represented by a formula ofC_(i)H_(j)F_(k)N_(l), wherein i is an integer ranging from 1 to 6, j isan integer ranging from 0 to 8, k is an integer ranging from 0 to 6, andl is an integer ranging from 0 to
 4. 27. The structure of claim 26,wherein said volatile compound is derived from a reaction of nitrogen insaid nitrogen-containing dielectric layer and a first portion of acarbon-rich polymer layer present on said surface of nitrogen-containingdielectric layer.
 28. The structure of claim 17, wherein saidcarbon-rich polymer layer does not include nitrogen.
 29. The structureof claim 17, wherein said first thickness ranges from 0.2 nm to 1 nm,and said second thickness ranges from 1 nm to 3 nm.
 30. The structure ofclaim 17, wherein said nitrogen-containing dielectric layer comprises adielectric metal oxynitride selected from the group consisting ofHfO_(x)N_(y), ZrO,N_(y), La₂O_(x)N_(y), TiO_(x)N_(y), SrTiO_(x)N_(y),LaAlO_(x)N_(y), Y₂O_(x)N_(y), and an alloy thereof.
 31. The structureclaim 17, wherein said hard mask layer comprises a metallic material.32. The structure of claim 31, wherein said metallic material comprisesWC, TiC, TiC, a stack thereof, or an alloy thereof.
 33. The structure ofclaim 17, further comprising a dielectric cap layer located between saidhard mask layer and said interconnect level dielectric material layer.34. The structure of claim 34, wherein said dielectric cap layercomprises silicon oxide, silicon nitride, silicon oxynitride, adielectric metal oxide, or a combination thereof.
 35. The structure ofclaim 17, wherein said interconnect level dielectric material layercomprises a spin-on-oxide, an undopedorganosilicate glass, afluorosilicate glass (FSG), a phosphosilicate glass (PSG), aborosilicate glass (BSG), or a borophosphosilicate glass (BPSG).
 36. Thestructure of claim 17, further comprising an underling metalinterconnect level structure located between said substrate and saidnitrogen-containing dielectric layer.
 37. The structure of claim 36,wherein said underling metal interconnect level structure comprises atleast one conductive structure and at least one underlying dielectriclayer in each line level and in each via level.